The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2001

Filed:

Feb. 10, 1998
Applicant:
Inventors:

Bong-young Yoo, Seoul, KR;

Byung-Lyul Park, Seoul, KR;

Dae-hong Ko, Kyungki-do, KR;

Sang-in Lee, Kyungki-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract

A tungsten or other metal layer is chemical vapor deposited using a source gas containing tungsten, a reducing gas and a nitrogen-containing gas. The nitrogen-containing gas can act as a surface roughness reducing gas that reduces the roughness of the tungsten layer compared to a tungsten layer that is chemical vapor deposited using the source gas containing tungsten and the reducing gas, but without using the surface roughness reducing gas. Viewed in another way, the nitrogen-containing gas acts as a growth rate controlling gas that produces uniform growth of the tungsten layer in a plurality of directions compared to a tungsten layer that is deposited using the source gas containing tungsten and the reducing gas, but without using the growth rate controlling gas.


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