The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Mar. 27, 1997
Yuichi Mikata, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a method of producing a semiconductor apparatus, when a thin film is formed on a semiconductor substrate in the CVD reactive chamber by the CVD method, a remaining region is provided where a gas for film formation remains to a proximity of a surface of the semiconductor substrate, and a CVD thin film is provided on the substrate by decomposing only the gas for film formation existing in the remaining region without supplying an additional gas from the outside of the remaining region to the remaining region. With the method, when the thin film is formed on the substrate by the CVD method, the thin film is efficiently deposited on the substrate in a reactive chamber by efficiently using a reactive gas for film formation introduced into a CVD reactive chamber, to thereby reduce cost of forming the thin film remarkably.