The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Dec. 29, 1999
Applicant:
Inventors:
Soon-Yong Kweon, Kyoungki-Do, KR;
Seung-Jin Yeom, Kyoungki-Do, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
Disclosed is a ferroelectric random access memory device having ferroelectric capacitors. The FRAM device according to the present invention prevents the polymer by using the TiN layer as an etching (or hard) mask and prevents the Ti atoms from being diffused into the ferroelectric layer by applying the thermal treatment to the TiN pattern on the Pt upper electrode. Furthermore, adhesive strength between the capping oxide layer and the Pt upper electrode is improved by the oxidation of the TiN pattern.