The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2001

Filed:

Nov. 04, 1998
Applicant:
Inventors:

Ken Kawamata, Hachioji, JP;

Nobuaki Mitamura, Hachioji, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/434 ; C23C 1/435 ;
U.S. Cl.
CPC ...
C23C 1/434 ; C23C 1/435 ;
Abstract

A substrate,is autorotatably installed in a vacuum chamber,at an upper part thereof. MgF,granules,as a film source material are put in a quartz boat,and mounted on a magnetron cathode,The magnetron cathode,is connected through a matching box,to a 13.56 MHz radio frequency power source,Cooling water,for holding the temperature of the magnetron cathode,constant flows on a lower face of the magnetron cathode,A side face of the vacuum chamber,is provided with gas introduction ports,for introducing gas in the vacuum chamber,A shutter,is placed between the magnetron cathode,and the substrate,This structure provides a process enabling forming a thin film at a high speed by sputtering, especially, a high speed sputtering process enabling forming a thin fluoride film free of light absorption in a high speed by sputtering.


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