The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
May. 05, 1999
Applicant:
Inventor:
Timothy Scott Dyer, Tempe, AZ (US);
Assignee:
Accord S. E. G., Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/600 ;
U.S. Cl.
CPC ...
C23C 1/600 ;
Abstract
CVD reactors can be cleaned at surprisingly high rates using Non-Green House gases by employing the Non-Green House gases at high temperatures and with relatively high fluorine free radical concentrations so long as high concentrations of oxygen are also used to compensate for the detrimental effects of the high temperatures and free fluorine radical concentrations. Net oxide residue etch rates approximately 2,800 times greater than etch rates achieved with controlled Green House gases can be achieved. This is done by employing a pre-ionization module upstream of the reactor to be cleaned to generate the requisite high density plasma.