The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Nov. 09, 1999
Applicant:
Inventor:
Chung K. Chang, Santa Clara, CA (US);
Assignee:
Eon Silicon Devices, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/18 ;
U.S. Cl.
CPC ...
H02M 3/18 ;
Abstract
A method and apparatus for providing a charge pump that is particularly useful for generating high voltages and high currents for erasing and programming flash electrically-erasable programmable read only memory arrays (Flash EEPROMs). The invention includes an efficient method and circuit for generating a pumped voltage with no voltage drop from one stage to the next by using a simple two-phase clocking scheme and an auxiliary pump to gate a larger primary pump. One feature allows adjustment of the level of voltage pumping to accommodate higher voltage power supplies.