Semiconductor integrated circuit device with low power consumption and simple manufacturing steps

Abstract

In a semiconductor integrated circuit, a control transistor,and a potential clamp circuit,are arranged between a power supply line,and a virtual power supply line,. Even in a sleeve mode where the control transistor,is turned off, the potential clamp circuit,-,clamps the virtual power supply line,at a certain potential to hold a potential state (high level or low level) of each node of a logical circuit. At this time, each FET forming the logical circuit is applied with a back bias so that a threshold voltage Vt becomes higher than that in an active mode. Therefore, a leakage current can be decreased. In the semiconductor integrated circuit, the threshold voltage Vt of the control transistor,can be selected to be equal to that of one FET of the complementary FET forming the logical circuit. Therefore, the layout area and the number of manufacturing steps can be reduced.