The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Jun. 22, 1999
Hidefumi Yasuda, Kawasaki, JP;
Mayumi Tomita, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device having an inter-layer insulation film that allows a refractory metal to be easily etched and that well covers high side walls of a gold plate and a fabrication method thereof are disclosed. The semiconductor device comprises a semiconductor substrate, a conductive portion formed on the semiconductor substrate, a metal film formed on the conductive portion, a gold plate portion formed on the metal film, an inter-layer insulation film formed on an area of the semiconductor substrate, the area being free from the conductive portion, the metal film, and the gold plate portion in such a manner that the inter-layer insulation film contacts side walls of the conductive portion, the metal film, and the gold plate portion, a refractory metal film formed in such a manner that the refractory metal film coats the gold plate portion, and a protection film formed in such a manner that the protection film exposes part of the refractory metal film as an electrically connecting portion and coats the inter-layer insulation film and the refractory metal film.