The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Jan. 13, 1999
Hideki Satake, Chigasaki, JP;
Akira Toriumi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In the manufacturing process of a field effect transistor, the main surface of the semiconductor layer is exposed to the atmosphere containing oxygen atoms and nitrogen atoms at first. Then, the gate insulating film is formed by introducing heavy hydrogen atoms therein such that the concentration of heavy hydrogen atoms in the interface of a gate insulating film and the gate electrode is higher than that of a middle portion of the gate insulating film located in the middle of the gate insulating film in the direction of the thickness of the gate insulating film. Subsequently, the gate electrode is formed on the gate insulating film. Then, source and drain regions are formed on the main surface of the semiconductor layer to sandwich the gate electrode therebetween. By virtue of the above-mentioned method, a gate insulating film having a small thickness and high electric stability can be obtained.