The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Mar. 23, 1999
Dean Tran, Westminster, CA (US);
Eric R. Anderson, Redondo Beach, CA (US);
Edward A. Rezek, Torrance, CA (US);
TRW Inc., Redondo Beach, CA (US);
Abstract
An angle cavity resonant photodetector assembly (,), which uses multiple reflections of light within a photodetector (,) to convert input light into an electrical signal. The photodetector (,) has a combination of generally planar semiconductor layers including semiconductor active layers (,) where light is converted into an electrical output. The photodetector (,) is positioned relative to a waveguide (,), where the waveguide (,) has a waveguide active layer (,) located between a pair of waveguide cladding layers (,) and (,) and includes a first end (,) for receiving light and a second end (,) for transmitting the light to the photodetector (,). The photodetector (,) has a first reflector (,) and second reflector (,) that provides for multiple reflections across the semiconductor active layers (,). In another embodiment, the waveguide (,) is positioned on one side of a cavity (,) and the photodetector (,) is positioned at an opposite end of the cavity (,) such that the light from the waveguide (,) travels across the cavity (,). The photodectetors (,) is angled relative to the propagation direction of the light. The photodetector includes the first reflector (,) and the second reflector (,), which causes the light to pass through different areas of the photodetector active layers (,).