The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Dec. 10, 1998
Cheng P. Wen, Mission Viejo, CA (US);
Linda P. B. Katehi, Northville, MI (US);
Stephen Robertson, Springfield, NJ (US);
Thomas Ellis, Ann Arbor, MI (US);
Katherine Herrick, Ann Arbor, MI (US);
Gabriel M. Rebeiz, Ann Arbor, MI (US);
Raytheon Company, Lexington, MA (US);
Abstract
Structures and methods that provide for via transitions between opposite sides of a high resistivity silicon micro-machined membrane substrate. The via transitions provide ground-signal-ground interconnection between coplanar waveguides disposed on opposite sides of substrate. Adjacent via transitions are anisotropically etched from opposite surfaces of the substrate to form the via transitions. The ground-signal-ground configuration provides RF impedance matching at the via transition.