The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Aug. 04, 1998
Toshiaki Hasegawa, Kanagawa, JP;
Junichi Aoyama, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed is a method of forming a cap insulating film at a high reliability prior to heat-treatment for removing an —OH group from a planarization insulating film (APL film) which is excellent in a gap fill ability and global planarization ability and which is formed by a liquid phase CVD process. The (lower) cap insulating film is formed by plasma CVD using a source gas containing an inorganic silane compound gas, O,and a hydrocarbon; or an organic silane compound gas and O,. With this method, the cap insulating film can be formed without occurrence of harmful ammonia and particles in plasma.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile