The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Jul. 13, 1999
Kang-Yoon Lee, Sungnam-shi, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A dynamic random access memory (DRAM) cell storage node and a fabricating method thereof are provided. A storage contact plug,is formed in a first insulating layer,on a semiconductor substrate. A second insulating layer,a material layer,and a third insulating layer,are sequentially formed on the first insulating layer. The material layer prevents etchant of the third insulating layer from attacking the second insulating layer. The third insulating layer, the material layer, and the second insulating layer are sequentially etched to form an opening exposing the storage contact plug and a portion of the surface of the first insulating layer. The opening is filled with a conductive layer to form a storage node,The third insulating layer is etched until the top surface of the material layer is exposed, and the material layer is etched until the top surface of the second insulating layer is exposed. Overetching is thus prevented, avoiding collapse or breakage of the storage node, dielectric leakage, and defective step coverage of upper electrodes.