The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Feb. 24, 2000
Yumiko Akaishi, Gunma, JP;
Shuichi Kikuchi, Gunma, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
Disclosed is a method of manufacturing a semiconductor device which includes a source region, a channel region, a drain region, a gate electrode formed on the channel region through a gate insulating film,and a drift region (N,layer,) formed between the channel region and the drain region, wherein the process of forming the drift region (N,layer) comprises the steps of: ion-implanting and diffusing at least two kinds of second conduction type impurities (e.g. phosphorus and arsenic ions) having different diffusion coefficients in a P-type well region,; ion-implanting at least one kind first conduction type impurities (e.g. boron ions) having a diffusion coefficient substantially equal to or larger than that of at least one of said second conduction type impurities (e.g. phosphorus); and diffusing the first conduction type impurities after the gate insulating film,has been formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile