The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Jul. 07, 1999
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Abstract
Nonvolatile memory capable of programming and erasure and method for fabricating the same, the method comprising the steps of (1) forming an oxide film on a first conduction type semiconductor substrate, (2) conducting an annealing in an NO or N,O ambient to convert the oxide film into a vertical lamination of a first silicon oxynitride region containing nitrogen and a second silicon oxynitride region containing relatively less nitrogen compared to the first silicon oxynitride region formed on the substrate, (3) patterning a gate electrode on the second oxynitride region, (4) forming second conduction type source, and drain impurity diffusion regions in surfaces of the substrate on both sides of the gate electrode, whereby facilitating a simple and easy fabrication process, a low programming voltage, a high performance, and a high device reliability.