The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Sep. 10, 1999
Kab-jin Nam, Yongin, KR;
Seok-jun Won, Seoul, KR;
Ki-yeon Park, Yongin, KR;
Yong-woo Hyung, Suwon, KR;
Young-wook Park, Anyang, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for manufacturing a capacitor having a dielectric film formed of a tantalum oxide film. The method includes forming a lower electrode that is electrically connected to an active region of a semiconductor substrate. A pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof, is formed on the surface of the lower electrode. A dielectric film is formed on the pre-treatment film using a Ta precursor. The dielectric film includes a first dielectric layer deposited at a first temperature selected from a designated temperature range, and a second dielectric layer deposited at a second temperature different from the first temperature and selected from the same designated temperature range. A thermal treatment is thereafter performed on the dielectric film in an oxygen atmosphere.