The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Sep. 30, 1999
Jong-Hwan Kim, Bucheon, KR;
Suk-Kyun Lee, Incheon, KR;
Yong-Cheol Choi, Bucheon, KR;
Chul-Joong Kim, Bucheon, KR;
Samsung Electronics, Co., Ltd., Suwon, KR;
Abstract
A method for fabricating a BiCDMOS device where bipolar, CMOS and DMOS transistors are formed on a single wafer is provided. A semiconductor region of a second conductivity type is formed on a semiconductor substrate of a first conductivity type. Well regions of first and second conductivity types are formed within the semiconductor region. Then, an oxidation passivation layer pattern defining a region where a pad oxide layer and a field oxide layer are to be formed is formed on a surface of the substrate where the well regions have been formed. Impurity ions of the first conductivity type are implanted into the entire surface of a region where the field oxide layer is to be formed, using the oxidation passivation layer pattern as an ion implantation mask. An ion implantation mask pattern defining a field region of the second conductivity type is formed on the substrate where the oxidation passivation layer has been formed. Impurity ions of the second conductivity type are implanted, using the ion implantation mask pattern. Then, the ion implantation mask pattern is removed. The field oxide layer is formed by annealing, using the oxidation passivation layer pattern, and simultaneously field regions of the first and the second conductivity types are formed.