The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2001

Filed:

Oct. 23, 1998
Applicant:
Inventors:

Carlos M. Chacon, Orlando, FL (US);

Pradip K. Roy, Orlando, FL (US);

Assignee:

Lucent Technologies Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/166 ; G01R 3/126 ;
U.S. Cl.
CPC ...
H01L 2/166 ; G01R 3/126 ;
Abstract

The present invention provides a method for controlling a process parameter for fabricating a semiconductor wafer. In one embodiment, the method includes forming a test substrate using a given process parameter, determining a flatband voltage of the test substrate, and modifying the given process parameter to cause the flatband voltage to approach zero. The process parameter that is modified to cause the flatband voltage to approach zero may vary. The flatband may be determined by a non-contact method, which uses a kelvin probe to measure the flatband voltage and a corona source to deposit a charge on the test substrate.


Find Patent Forward Citations

Loading…