The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2001

Filed:

Jan. 14, 1999
Applicant:
Inventor:

Tetushi Otake, Tokyo, JP;

Assignee:

Toko, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/10 ; G05F 1/40 ;
U.S. Cl.
CPC ...
G05F 1/10 ; G05F 1/40 ;
Abstract

A switching power supply, eliminating effect of a potential difference generated in a driving circuit, in which a rapid operation speed of a switching transistor Q,and a high efficiency are obtained. An auxiliary bias circuit forming a polarity inversion circuit together with the switching transistor Q,is constructed by connecting a capacitor C,and a diode D,in series between a collector of the switching transistor Q,and a ground, and by connecting a diode D,and a capacitor C,in series between a connection point of the capacitor C,and the diode D,and a ground. One end of a main current path of the transistor Q,which conducts when the switching transistor Q,is in an OFF state, is connected to a connection point of the diode D,and the capacitor C,in the auxiliary bias circuit,, thereby supplying a voltage obtained in the auxiliary bias circuit,to the switching transistor Q,via the transistor Q,. This voltage is applied as a reverse bias to the switching transistor Q,and eliminates a voltage between a base and an emitter of the transistor Q


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