The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2001

Filed:

Jun. 30, 1998
Applicant:
Inventors:

John M. Macaulay, Palo Alto, CA (US);

Peter C. Searson, Baltimore, MD (US);

Robert M. Duboc, Jr., Menlo Park, CA (US);

Christopher J. Spindt, Menlo Park, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/02 ; H01J 2/110 ; H01J 1/16 ; H01J 1/910 ; H01J 1/62 ;
U.S. Cl.
CPC ...
H01J 1/02 ; H01J 2/110 ; H01J 1/16 ; H01J 1/910 ; H01J 1/62 ;
Abstract

An electron-emitting device contains a lower conductive region (,), a porous insulating layer (,A,,B,,D,,E, or,F) overlying the lower conductive region, and a multiplicity of electron-emissive elements (,A, or,B) situated in pores (,) extending through the porous layer. The pores are situated at locations substantially random relative to one another. The lower conductive region typically contains a highly conductive portion (,A) and an overlying highly resistive portion (,B). Alternatively or additionally, a patterned gate layer (,B,,B, or,B) overlies the porous layer. Openings (,, or,) corresponding to the filaments extend through the gate layer at locations generally centered on the filaments such that the filaments are separated from the gate layer.


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