The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Apr. 20, 1998
Andreas Daetwyler, Kloten, CH;
Urs Deutsch, Kilchberg, CH;
Christoph Harder, Zurich, CH;
Wilhelm Heuberger, Richterswil, CH;
Eberhard Latta, Adliswil, CH;
Abram Jakubowicz, Rueschlikon, CH;
Albertus Oosenbrug, Langnau, CH;
William Patrick, Richterswil, CH;
Peter Roentgen, Thalwil, CH;
Erica Williams, Thalwil, CH;
Uniphase Laser Enterprise AG, Zurich, CH;
Abstract
As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.