The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Dec. 03, 1997
Applicant:
Inventor:
Yutaka Komai, Tsuchiura, JP;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
To provide a semiconductor device fuse, which does not damage the lower layer when it is cut by irradiation with a laser beam. In forming a fuse,by forming an electroconductive thin film on the surface of a semiconductor substrate and patterning it, a cut part,is constituted by installing an expanding part,in a narrow-width part,, and the cut part,is cut by irradiation with a laser beam. Even if scattering of the intensity of the laser beam and scattering of the irradiation position occur, no damage occurs in the lower layer, and an electrical element can be formed even at the position directly under the fuse,. The cut part,preferably has a circular shape.