The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Sep. 10, 1998
Toshio Komuro, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A gate electrode is formed on a first conductive type semiconductor. Next, a second conductive type first impurity is selectively introduced in a drain formation planned region at a surface of the semiconductor substrate to form a first diffusion layer. Then, a second conductive type second impurity having a diffusion coefficient smaller than that of the first impurity is selectively introduced in a source formation planned region at the surface of the semiconductor substrate to form a second diffusion layer. Thereafter, a side wall is formed on a side surface of the gate electrode. Then, a second conductive type third impurity is introduced at the surface of the semiconductor substrate at a density higher than the first and second impurities, using the gate electrode and the side wall as a mask.