The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2001

Filed:

Jan. 19, 2000
Applicant:
Inventors:

Albert O. Adan, Ikoma, JP;

Jun Koyama, Atsugi, JP;

Shunpei Yamazaki, Tokyo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 3/1036 ; H01L 3/1112 ; H01L 2/701 ; H01L 2/712 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 3/1036 ; H01L 3/1112 ; H01L 2/701 ; H01L 2/712 ;
Abstract

An SRAM cell comprising, at least, two driving transistors and two transfer transistors, and two load transistors each comprised of a TFT and disposed on these transistors through a layer insulation film, the load transistors having an active region comprising an Si film having improved crystallizability of amorphous Si by the solid phase growth technique using a catalytic element, and a barrier layer for preventing the catalytic element from diffusion into the driving transistors and the transfer transistors which is disposed between the layer insulation film and the load transistors.


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