The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
May. 04, 1999
Nada El-Zein, Phoenix, AZ (US);
Jonathan Lewis, Gilbert, AZ (US);
Mandar R. Deshpande, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A heterostructure interband tunneling diode includes a contact layer comprising indium gallium arsenide of a first conductivity type, an injection layer comprising indium gallium arsenide of a second conductivity type, a first doped layer of the first conductivity type positioned adjacent to the contact layer, and a second doped layer of a second conductivity type juxtaposed between the first doped layer and the injection layer, wherein at least one of the first and second tunnel barrier layers comprises indium aluminium arsenide. A second embodiment includes a doped layer of the first conductivity type positioned adjacent to the contact layer, and a barrier layer positioned adjacent to the injection layer, and a quantum well layer comprising indium gallium arsenide juxtaposed between the doped layer and the barrier layer, wherein at least one of the doped and barrier layers comprises indium aluminium arsenide.