The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Sep. 10, 1999
Masanori Sakai, Tokyo, JP;
Masayuki Tsuneda, Tokyo, JP;
Naoko Matsuyama, Tokyo, JP;
Hideharu Itatani, Tokyo, JP;
Michihide Nakamure, Tokyo, JP;
Kokusai Electric Co., Ltd., Tokyo, JP;
Abstract
A method and apparatus for producing a semiconductor device can provide a uniform film on a substrate. A substrate is introduced into a reaction chamber or tube (,) which has gas feed ports (,) and gas exhaust ports (,). The substrate in the reaction tube (,) is heated to substantially a film forming temperature while supplying a prescribed gas to the reaction tube (,) through the gas feed ports (,) and exhausting the prescribed gas from the reaction tube (,) through all the exhaust ports (,). A film-forming gas is supplied to the reaction tube (,) to form a film on the substrate. The substrate with the film formed thereon is taken out of the reaction tube (,). Moreover, after the film formation on the substrate, a prescribed gas is supplied to the reaction tube (,) from the gas feed ports (,) while being exhausted from the reaction tube (,) through all the exhaust ports (,), thereby removing a residual gas in the reaction tube.