The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Aug. 26, 1999
Applicant:
Inventors:
Toshitaka Hibi, Kyoto, JP;
Kazuo Hayama, Osaka, JP;
Assignee:
Matsushita Electronics Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/120 ;
Abstract
A method for fabricating a semiconductor device includes the steps of: forming a doped layer of a first conductivity type within a surface region of a semiconductor substrate; forming a recess by depositing an insulating film on the semiconductor substrate and then removing at least the insulating film in a region thereof where a gate electrode is to be formed; forming a gate insulating film on the surface of the semiconductor substrate, which is exposed inside the recess; and forming the gate electrode by filling in the recess with a conductive film.