The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Jun. 28, 2000
Keun Woo Lee, Kyungki-Do, KR;
Ki Seog Kim, Kyungki-Do, KR;
Jin Shin, Seoul, KR;
Sung Kee Park, Kyungsangbuk-Do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-Shi, KR;
Abstract
The present invention relates to a method of forming a gate in a stack gate flash EEPROM cell. In order to preventing a lateral bird's beak from occurring in an ONO dielectric layer during a reoxidation process to be performed after a formation of a cell gate having a stack structure formed by stacking a floating gate, an ONO dielectric layer and a control gate, an oxide layer and a nitride layer are sequentially formed on an entire structure before the reoxidation and after a formation of the cell gate. The oxide layer serves to reduce a stress in depositing the nitride layer, and the nitride layer serves to prevent an occurrence of the lateral bird's beak of the ONO dielectric layer during the reoxidation process. Accordingly, the present invention prevents the lateral bird's beak of the ONO dielectric layer, thereby improving a speed of cell erase operation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile