The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Oct. 22, 1999
Applicant:
Inventor:
Christine Anceau, Saint Roch, FR;
Assignee:
STMicroelectronics S.A., Gentilly, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/1336 ;
Abstract
A method of forming an insulated well in an upper portion of a silicon substrate, including the steps of providing a structure of silicon-on-insulator type including a silicon substrate, an insulating layer, and a thin single-crystal silicon layer; removing the insulating layer and the thin silicon layer outside locations where the insulated well is desired to be formed; growing an epitaxial layer; performing a planarization; and making a vertical insulating wall above the periphery of the maintained portion of the thin insulating layer.