The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Mar. 01, 1999
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
A semiconductor device (,) having a termination structure (,) and a reduced on-resistance. The termination structure (,) is fabricated using the same processing steps that were used for manufacturing an active device region (,). The termination structure (,) and the active device region (,) are formed by etching trenches (,) into a drift layer (,). The trenches (,) are filled with a doped polysilicon trench fill material (,), which is subsequently planarized. The semiconductor device (,) is formed in the trenches (,) filled with the polysilicon trench fill material (,) that are in the active region. The trenches (,) filled with the polysilicon trench fill material (,) in a termination region serve as termination structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile