Fabrication of three-dimensional architecture for solid state radiation detectors

Abstract

A radiation-damage resistant radiation detector with preferably three dimensional collection electrodes may be formed on a substrate that is a semiconductor or an insulator, and may be operated in avalanche mode to increase detection output. A detector comprising interleaved n-type and p-type preferably three dimensional electrodes formed in an area whose perimeter is an active trench. The trench is doped with dopant of opposite type polarity to that of the nearest electrodes, with respect to which the trench is reverse biased. The trench itself can act as a detector element, and the overall device exhibits edge-to-edge active detection. A plurality of such detectors may be arrayed in a plane to provide an essentially seamless large area detector suitable for medical and research applications, including synchrotron studies. Face-to-face bonding between ICs such as detector and readout ICs is carried out using a high yield vapor deposition process in which oxide room temperature bonds initially secure the two ICs. Using room temperature polymer deposition, IC surfaces may be protected during processing or, in final state, with a PFTE film.