The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Dec. 28, 1998
Young Bog Kim, Kyoungki-Do, KR;
Abstract
The present invention relates to a method for manufacturing ferroelectric capacitor, capable of preventing the hydrogen gas generated in the process for the overlying interlayer insulating layer from being diffused into the underlying ferroelectric material film and/or the first diffusion barrier TiO,film, thereby eliminating the aggravation of the characteristics of the ferroelectric capacitor. As ferroelectric material film, SrBi,Ta,O,(simply SBT) film or PZT film can be formed. For PZT film, TiO,is used for a first diffusion barrier film, silicon nitride such as Si,N,or SiON is used for a second diffusion barrier film, and SiO,film can be provided under the silicon nitride film as a stress buffer film. Alternatively, for the SBT, a silicon nitride film is provided as a diffusion barrier film and a SiO,film is further provided under the silicon nitride film as a stress buffer film. Such a silicon nitride film prevents hydrogen or oxygen generated in the following process from being introduced into the underlying ferroelectric material film. Thus, the ferroelectric material can be remain stable in stochiometry in relatively long time, thereby improve the reliability thereof.