The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Feb. 08, 1999
Donald Ackley, Cardiff, CA (US);
Chan-Long Shieh, Paradise Valley, AZ (US);
Thomas B. Harvey, III, Scottsdale, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
Adjacent first and second transistors are integrated with a substrate. Each of the first and second transistors has a gate electrode, a source electrode, a drain electrode and a semiconductive channel formed of an organic material, the semiconductive channel electrically coupling the source electrode with the drain electrode. The source electrode of the first transistor is electrically coupled to the source electrode of the second transistor. A molecular receptor is bound directly to a surface of the semiconductive channel of the first transistor. A non-zero offset voltage, which produces equal channel currents in the semiconductive channels of the first and second transistors after a molecule has bound with the molecular receptor without a like binding event proximate to the second transistor, is sensed between the gate electrodes of the first and second transistors.