The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2001
Filed:
Nov. 30, 1999
Applicant:
Inventors:
Hiroyoshi Shoji, Miyagi, JP;
Takayuki Yamaguchi, Miyagi, JP;
Junichi Azumi, Miyagi, JP;
Yukito Sato, Miyagi, JP;
Morimasa Kaminishi, Miyagi, JP;
Assignee:
Other;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/400 ; C23F 1/00 ; H01B 1/300 ; B44C 1/22 ; H01L 2/100 ;
U.S. Cl.
CPC ...
C23C 1/400 ; C23F 1/00 ; H01B 1/300 ; B44C 1/22 ; H01L 2/100 ;
Abstract
A thin-film microstructure sensor includes a substrate having an insulation layer. A thin-film platinum temperature-sensitive resistor is provided on the insulation layer of the substrate, the thin-film platinum temperature-sensitive resistor comprising a platinum layer, the platinum layer having a maximum crystal grain size above a reference grain size of 800 Å. The thin-film platinum temperature-sensitive resistor is formed by a sputtering process to provide a temperature coefficient of resistance TCR above a reference TCR level of 3200 ppm.