The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Jun. 02, 1995
Other;
Abstract
For suppressing generation of leakage current and side-gate effect in a junction field effect transistor, a gate extension is formed on a semi-insulative compound semiconductor substrate in a manner to extend from a gate and to protrude outward beyond a channel transversely thereto, and an insulating layer is formed on the semi-insulative compound semiconductor substrate under the gate extension. A method of producing this transistor comprises the steps of first forming a channel and a source-drain on a substrate, then forming a gate on the channel together with a gate extension which extends from the gate and protrudes outward beyond the channel transversely thereto, and forming an insulating layer adjacently to the channel and the source-drain in such a manner that no gap is existent between the insulating layer and at least the channel.