The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Mar. 24, 1998
Nobuaki Teraguchi, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A group III-V type nitride compound semiconductor device with superior characteristics and a method of readily manufacturing the same are provided. The group III-V type nitride compound semiconductor device has a metal nitride layer, an n-type contact layer, an n-type clad layer, a light emitting layer, a p-type clad layer and a p-type contact layer successively formed on an insulating substrate which has an opening in which an n-type electrode,is formed in contact with the metal nitride layer. A p-type electrode,is formed on the p-type contact layer,. The area of the electrode closer to the substrate can be increased without degrading the mechanical strength of the substrate, and the operating voltage of the semiconductor device can thus be reduced.