The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Jun. 21, 1994
Alan Carter Seabaugh, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A quantum transistor (,) includes an emitter (,), an injector structure (,), a base (,) and a collector (,) coupled to the base. The injector (,) is interposed between the emitter (,) and the base (,). The injector structure (,) includes a quantum well (,) having a general conductance band minimum energy level. A notch (,) in the well (,) has a conductance band minimum energy level that is lower than the general level. This notch (,) is operable to lower the energy of electrons disposed in the quantum well (,). Therefore, the electrons resident in the well are injected through a barrier (,) into the base (,) at an energy level at or slightly above the base/collector barrier &phgr;,, but below the X or L energies such that intervalley scattering is reduced.