The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Jul. 31, 1998
Akira Mase, Okazaki, JP;
Tomoyoshi Kushida, Seto, JP;
Toyota Jidosha Kabushiki Kaisha, Aichi-ken, JP;
Abstract
A side insulation layer is formed on a side wall of a gate electrode by oxidizing (or nitrizing) a substance of the gate electrode, so that the gate electrode is insulated from the semiconductor substrate with the side insulation layer and a gate insulation film. The gap between the gate electrode and the semiconductor substrate is greater around the side wall of the gate electrode than around the center thereof. The gap between the side wall of the gate electrode and the semiconductor substrate is densely filled with an insulating substance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile