The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Jun. 23, 1999
Applicant:
Inventor:
Asim Selcuk, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method of asymmetrically doping a region beneath a gate by controlling the lateral surface profile of the gate using a mask. A first embodiment of the method includes forming a mask over the gate such that it extends beyond the opposing sides of the gate in an uneven manner. A second embodiment of the method includes forming a mask including sidewall spacers on both sides of the gate in an uneven manner. The uneven manner of providing the mask for ion implantation can be used to define an asymmetric lateral channel profile, which can be advantageously used to vary gate overlap, channel V,, or source/drain doping as necessary.