The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Dec. 15, 1998
Akiyoshi Watanabe, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A first silicon film is deposited on a semiconductor substrate. A capacitor dielectric film is deposited on the first silicon film. A second silicon film is deposited on the capacitor dielectric film. The second silicon film is patterned to leave an upper electrode made of the second silicon film above an insulating surface of the semiconductor substrate. A first insulating film is deposited on the upper electrode and the capacitor dielectric film. A lamination structure of the first insulating film and the capacitor dielectric film is anisotropically etched to leave a spacer insulating film made of the first insulating film on the side walls of the upper electrode and to leave a portion of the capacitor dielectric film under the upper electrode and the spacer insulating film. The first silicon film is patterned to leave a lower electrode made of the first silicon film in an area inclusive of the upper electrode and the spacer insulating film.