The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2001

Filed:

May. 03, 1999
Applicant:
Inventors:

Richard L. Wallace, Jr., Acton, MA (US);

Richard C. Krauchune, Shirley, MA (US);

Assignee:

Evergreen Solar, Inc., Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/520 ;
U.S. Cl.
CPC ...
C30B 1/520 ;
Abstract

The invention features a method of controlling the depth of a melt for or crystal growth. According to the method, an input signal is applied through a crucible and a material disposed within the crucible. An output signal generated in response to the input signal is measured. The output signal relates to the depth of the melt. An amount of the source material introduced into the melt is adjusted to maintain the depth of the melt at a substantially constant level using the output signal.


Find Patent Forward Citations

Wallace, Jr., Richard. (2001). Melt depth control for semiconductor materials grown from a melt (U.S. Patent No. 6200383). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6200383

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…