The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Jul. 14, 1999
Applicant:
Inventors:
Hiroaki Fujii, Tokyo, JP;
Kenji Endo, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 3/306 ;
U.S. Cl.
CPC ...
C30B 3/306 ;
Abstract
In a method of manufacturing a semiconductor laser device having a double hetero structure which is structured by at least a first clad layer, an active layer and a second clad layer on a semiconductor substrate by the use of the organic metal vapor growth method, crystal is grown in first atmosphere gas containing hydrogen in a temperature rising process. Subsequently, the first atmosphere gas is switched into second atmosphere gas in a temperature dropping process after the crystal growth. The second atmosphere gas contains no hydrogen.