Topography simulation method and system of plasma-assisted etching process

Abstract

A topography simulation method using the Monte Carlo method is provided, which simulates the post-etching topography of a plasma-assisted etching process affected by different etching species such as the ion-assisted etching process. (a) A bulk- and/or sheath-plasma region is/are analyzed using a first random number, calculating a species energy of an incoming species. (b) A sort of the incoming species toward a minute surface region of a target material is selected using a second random number based on the species energy calculated in the step (a). (c) An absorption state of the incoming species with atoms of the target material on the minute surface region of the target material is selected using a third random number based on the species energy in the step (a) and the sort of the incoming species selected in the step (b). (d) A chemical reaction of the incoming species with the atoms of the target material on the minute surface region of the target material is selected from a chemical-reaction data table using a fourth random number based on the absorption state of the incoming species selected in the step (c). The chemical-reaction data table has been calculated using the molecular dynamics in advance. (e) A topography of the minute surface region is calculated based on the chemical reaction selected in the step (d).