The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2001

Filed:

Sep. 16, 1999
Applicant:
Inventors:

David John Krolak, Dodge Center, MN (US);

Terrance Wayne Kueper, Rochester, MN (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03B 1/00 ; H03K 3/00 ;
U.S. Cl.
CPC ...
H03B 1/00 ; H03K 3/00 ;
Abstract

An improved off-chip driver circuit is disclosed which will properly transition from an active mode to a high impedance mode. The circuit includes first and second input nodes for receiving a first and second input signal respectively. An input composite transmission gate including a p-channel transistor in parallel with an n-channel transistor to receive the first input signal is provided in the circuit. A push-pull circuit is also included which includes the pull-up transistor disposed between a voltage supply and an output node and a first pull-down transistor disposed between ground and the output node. The pull-up transistor has a gate electrode for receiving the first input signal provided by the input composite transmission gate. The first pull-down transistor has a gate electrode for receiving the second input signal. A control transistor is included and is coupled between the gate electrode of the pull-up transistor and the output node. The control transistor has a gate electrode connected to a first point of reference potential. An auxiliary transistor is provided coupled between the first input node and a gate electrode of the p-channel transistor for establishing and maintaining a voltage at the gate electrode of the p-channel transistor during a transition of the circuit from an active mode to a high impedance mode sufficient to provide a proper transition from the active mode to the high impedance mode. A biasing transistor is also provided having a gate electrode directly connected to the output node and coupled to the voltage supply for biasing an N-well in which the pull-up transistor, the control transistor, and the auxiliary transistor are situated.


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