The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Sep. 08, 1999
Hidetoshi Muramoto, Okazaki, JP;
Yoshihiko Isobe, Toyoake, JP;
Denso Corporation, Kariya, JP;
Abstract
In a semiconductor device including high-voltage, middle-voltage, and low voltage transistors having operating voltages different from one another, a gate length and a thickness of a gate oxide film are increased as the operating voltage is increased. Accordingly, in the high-voltage transistor, an electric field produced at a channel is relaxed. In the low-voltage transistor, a structure is made finer. A concentration of a well and an impurity amount implanted into a surface portion of a substrate are set to be identical with each other in all the transistors. Accordingly, the semiconductor device can be speedily manufactured at a high yield.