The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Jan. 06, 1998
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
An ON-state voltage is reduced. A line of gate trenches,is formed on an n-type silicon layer (a SOI layer),so as to divide a p-type base layer,and an n-type emitter layer,. The gate trench,extends from the n-type emitter layer,toward a collector electrode,. A gate electrode,is buried in the gate trench,with a gate insulation film,interposed therebetween. The gate electrode,is provided opposite to a vertical section of the p-type base layer,. Therefore, a channel width can be kept great. Furthermore, a wide region of the n-type silicon layer,which is provided opposite to the gate trench,functions as an accumulation layer of a hole. As a result, the ON-state voltage can be reduced.