The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Sep. 08, 1998
Applicant:
Inventors:
Kevin Brown, Orlando, FL (US);
Robert J. Martin, Orlando, FL (US);
Assignee:
Lockheed Martin Corporation, Bethesda, MD (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/906 ;
Abstract
A quantum well infrared photodetector includes a direct connection between the charge well and detector that induces a nonlinear dynamic bias. This dynamic bias advantageously corrects for nonuniformity in the conductance of the detector. In another feature, the charge well is fabricated on the detector element by adding an extra contact layer and a dielectric layer to a standard quantum well. Very dense focal plane arrays can be produced by making the charge well a part of the infrared detector.