The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Apr. 07, 1999
Kazuhiko Endo, Tokyo, JP;
Keisuke Shinoda, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
There is provided a method of fabricating a semiconductor device having a multi-layered structure and including an interlayer insulating film composed of carbon family material, the method including the steps of (a) depositing an insulating film on a lower wiring layer, the insulating film being composed of carbon family material, (b) annealing the insulating film in hydrogen atmosphere at a first temperature equal to or greater than a temperature at which the insulating film has been deposited, and (c) forming an upper wiring layer on the insulating film. The method suppresses gas from being discharged out of an insulating film without an increase in dielectric constant, and prevents deposited films on the insulating film from being peeled off.