Methods for forming gate electrodes of semiconductor devices

Abstract

Generally, after etching process for gate electrode patterning, oxidation process is performed to compensate for etching damage. There is provided a method for forming a gate electrode of a semiconductor device, which prevents the metal layer comprised of the gate electrode for being oxidized in such an oxidation process. In the present invention, a polysilicon layer is etched to form a gate electrode pattern and re-oxidation process is performed to compensate for the etching damage. After this, an inter-layer insulating layer is formed over the entire structure and partially removed so as to expose the polysilicon layer. A part of the polysilicon layer is then selectively removed to form an opening in the inter-layer insulating layer. Here, the other part of the polysilicon layer, which will be connected to a metal layer later, is exposed through the opening. The metal layer is then buried within the opening to complete the formation of the gate electrode made of poly-metal structure.