The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2001

Filed:

Jul. 21, 1994
Applicant:
Inventors:

John Edwin Graebner, New York, NY (US);

Sungho Jin, Millington, NJ (US);

Thomas Henry Tiefel, North Plainfield, NJ (US);

Assignee:

Lucent Technologies Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/626 ;
U.S. Cl.
CPC ...
C23C 1/626 ;
Abstract

Many potential applications of CVD diamond film require the ability to remove a predetermined quantity of material from a surface of the film. We have discovered that such removal is advantageously accomplished by contacting the surface of the polycrystalline diamond film with a metal selected from Fe, Ni, Mn and Ti (preferably Fe and Mn, most preferably Mn), and maintaining the metal-contacted diamond film at a temperature in the range 600-1100° C. (preferably 800-1000° C.) without relative lateral motion between the film and the metal, for an effective time for removal of the quantity of material, exemplarily less than 100 hours. The metal can be in any appropriate form, e.g., a deposited layer, (including a patterned layer), a foil, or powder. We have also discovered that the local thermal conductivity of CVD diamond films typically increases with distance from the lower surface of an as-grown film. Thus, in applications such as heat spreading it will frequently be advantageous to remove some of the fine-grained, low thermal conductivity material adjacent to the lower surface of the as-grown CVD film. Such removal can be accomplished by means of the above-described technique.


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